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componentes Descripción
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Intersil
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

Fairchild Semiconductor
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

RF Micro Devices
DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 10MHZ TO 850MHZ

Unspecified
Compliance Approved 2.4 GHz RF Transceiver Modules with Built-In RFDP8 Application Protocol

RF Micro Devices
DIGITAL CONTROLLED VARIABLE GAIN AMP 50 TO 1000MHZ, 6 BIT 0.5DB LSB CONTROL

RF Micro Devices
6-Bit, Digital Controlled Variable Gain Amplifier 50MHz to 4000MHz

Fairchild Semiconductor
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

VBsemi Electronics Co.,Ltd
P-Channel 60-V (D-S) MOSFET

RF Micro Devices
Digital Controlled Variable Gain Amplifier 400MHz to 2700MHz, 6-Bit 0.5dB LSB Control

Unspecified
Compliance Approved 2.4 GHz RF Transceiver Modules with Built-In RFDP8 Application Protocol

Intersil
14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

RF Micro Devices
DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 1400MHz to 2700MHz, 6-BIT 0.5dB LSB CONTROL

Fairchild Semiconductor
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

VBsemi Electronics Co.,Ltd
N-Channel 30-V (D-S) MOSFET

Intersil
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET