SC3587 Hoja de datos, SC3587 PDF - DATSAHEETQ

SC3587

Hoja de datos

Fabricante

Número de pieza

componentes Descripción

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SEMICONDUCTOR SELECTION GUIDE

NEC => Renesas Technology

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

Match & Start : SC3587

Gaomi Xinghe Electronics Co., Ltd.

SC35A

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

Gaomi Xinghe Electronics Co., Ltd.

SC35B

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

Gaomi Xinghe Electronics Co., Ltd.

SC35D

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

Gaomi Xinghe Electronics Co., Ltd.

SC35G

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

Gaomi Xinghe Electronics Co., Ltd.

SC35J

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

Gaomi Xinghe Electronics Co., Ltd.

SC35K

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

Gaomi Xinghe Electronics Co., Ltd.

SC35M

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

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