KSC5039F データシートの表示（PDF） - Fairchild Semiconductor
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KSC5039F Datasheet PDF : 5 Pages
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KSC5039F
High Voltage Power Switch Switching
Application
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
V CEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
800
400
7
5
10
3
30
150
-65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Plus test: PW=300µs, Duty Cycle=2% Pulsed
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IC = 1mA, IC = 0
VCB = 500V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 0.3A
IC = 2.5A, IB = 0.5A
IC = 2.5A, IB = 0.5A
VCE = 5V, IC = 0.1A
VCB = 10V , f = 1MHz
VCC=150V , IC = 2.5A,
IB1 = -IB2 = 0.5A
RL = 60Ω
Min.
800
400
7
10
Typ.
10
40
Max.
Units
V
V
10
µA
10
µA
1.5
V
2.0
V
MHz
pF
1
µs
3
µs
0.8
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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