SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES
ᴌHigh Voltage : VCEO=150V.
ᴌHigh Transition Frequency : fT=120MHz(Typ.).
ᴌ1W (Monunted on Ceramic Substrate).
ᴌSmall Flat Package.
ᴌComplementary to KTA1660.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
200
VCEO
150
VEBO
5
IC
50
IB
10
PC
500
PC*
1
Tj
150
Storage Temperature Range
Tstg
-55ᴕ150
PC* : KTC4372 mounted on ceramic substrate (250mm2x0.8t)
UNIT
V
V
V
mA
mA
mW
W
ᴱ
ᴱ
KTC4372
TRIPLE DIFFUSED NPN TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240
TEST CONDITION
VCB=200V, IE=0
VEB=5V, IC=0
VCE=5V, IC=10mA
IC=10mA, IB=1mA
VCE=5V, IC=30mA
VCE=30V, IC=10mA
VCB=10V, IE=0, f=1MHz
1998. 6. 15
Revision No : 2
MIN.
-
-
70
-
-
-
-
TYP.
-
-
-
-
-
120
3.5
MAX.
0.1
0.1
240
0.5
1.0
-
5.0
UNIT
ỌA
ỌA
V
V
MHz
pF
1/3