BC878 データシートの表示（PDF） - Philips Electronics
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BC878 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
BC878
FEATURES
• High DC current gain (min. 1000)
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Relay drivers.
DESCRIPTION
PNP Darlington transistor in a TO-92 (SOT54) plastic
package. NPN complements: BC875 and BC879.
PINNING
PIN
1
2
3
DESCRIPTION
base
collector
emitter
handbook, halfpage
1
2
3
2
1
MAM306
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−80
−60
−5
−1
−2
−200
0.83
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
150
UNIT
K/W
1999 May 31
2
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