TIP127(2001) データシートの表示（PDF） - Fairchild Semiconductor

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TIP127
(Rev.:2001)

PNP Epitaxial Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

10k

VCE = 4V

1k

100

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

1000

f = 0.1MHz

100

Cob

Cib

10

-0.1

-1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

VEB[V], EMITTER-BASE VOLTAGE

Figure 3. Output and Input Capacitance

vs. Reverse Voltage

90

75

60

45

30

15

0

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 5. Power Derating

©2001 Fairchild Semiconductor Corporation

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

-0.1

IC = 250IB

VBE(sat)

VCE(sat)

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10

5ms 1m5s00us100us

DC

-1

-0.1

-0.01

-1

TIP125

TIP126

TIP127

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Safe Operating Area

Rev. A1, June 2001

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