MJD45H11 データシートの表示（PDF） - Fairchild Semiconductor

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MJD45H11

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

1000

100

VCE = -1V

10

1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

25

20

15

10

5

0

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 3. Power Derating

-100

ICP(max)

-10

I (max)

C

-1

DC5ms1m5s00µ1s00µs

-0.1

-0.01

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1000

Figure 2. Safe Operating Area

©2003 Fairchild Semiconductor Corporation

Rev. C2, July 2003

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