BSW66A データシートの表示（PDF） - Philips Electronics
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BSW66A Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BSW66A; BSW67A; BSW68A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICBO
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
BSW66A
IE = 0; VCB = 50 V
−
IE = 0; VCB = 50 V; Tj = 150 °C
−
IE = 0; VCB = 100 V
−
collector cut-off current
BSW67A
IE = 0; VCB = 60 V
−
IE = 0; VCB = 60 V; Tj = 150 °C
−
IE = 0; VCB = 120 V
−
collector cut-off current
BSW68A
IE = 0; VCB = 75 V
−
IE = 0; VCB = 75 V; Tj = 150 °C
−
IE = 0; VCB = 150 V
−
emitter cut-off current
IC = 0; VEB = 3 V
−
IC = 0; VEB = 6 V
−
DC current gain
VCE = 5 V
IC = 10 mA
30
IC = 100 mA
40
IC = 500 mA
30
IC = 1 A
10
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
−
IC = 500 mA; IB = 50 mA
−
IC = 1 A; IB = 150 mA
−
base-emitter saturation voltage IC = 100 mA; IB = 10 mA
−
IC = 500 mA; IB = 50 mA
−
collector capacitance
emitter capacitance
IC = 1 A; IB = 150 mA
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 0; f = 1 MHz
−
transition frequency
IC = 100 mA; VCE = 20 V; f = 100 MHz −
Switching times (between 10% and 90% levels)
−
100 nA
−
50 µA
−
100 µA
−
100 nA
−
50 µA
−
100 µA
−
100 nA
−
50 µA
−
100 µA
−
100 nA
−
100 µA
−
−
−
−
−
−
−
−
−
150 mV
−
400 mV
−
1
V
−
900 mV
−
1.1 V
−
1.4 V
−
20 pF
−
300 pF
130 −
MHz
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 50 mA;
IBoff = −50 mA
−
500 −
ns
−
900 −
ns
1997 May 05
4
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