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MC10E416FN データシートの表示(PDF) - ON Semiconductor

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MC10E416FN
ON-Semiconductor
ON Semiconductor 
MC10E416FN Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MC10E416, MC100E416
Table 7. AC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = 5.0 V (Note 13)
0°C
25°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min
fMAX
tPLH
tPHL
Maximum Toggle Frequency
Propagation Delay to Output
> 2.0
d(Diff) 250 350 500 250 350 500 250
D(SE) 200 350 550 200 350 550 200
tSKEW Within-Device Skew (Note 14)
50
50
tSKEW
Duty Cycle Skew (Note 15) tPLH-tPHL
±10
±10
tJITTER
VPP(AC)
Random Clock Jitter (RMS)
Input Voltage Swing
(Differential Configuration)
<1
<1
150
1000 150
1000 150
85°C
Typ
350
350
50
±10
<1
Max Unit
GHz
ps
500
550
ps
ps
ps
1000 mV
tr
Rise/Fall Time
tf
(20 - 80%)
ps
100 200 350 100 200 350 100 200 350
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
13. 10 Series: VEE can vary 0.46 V / +0.06 V.
100 Series: VEE can vary 0.46 V / +0.8 V.
14. Within-device skew is defined as identical transitions on similar paths through a device.
15. Duty cycle skew defined only for differential operation when the delays are measured from the cross point of the inputs to the cross point
of the outputs.
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