TS925IDT(2001) データシートの表示（PDF） - STMicroelectronics
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TS925IDT Datasheet PDF : 15 Pages
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ELECTRICAL CHARACTERISTICS
VCC+ = 5V, VCC- = 0V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Input Offset Voltage
Vio
Tmin. ≤ Tamb ≤ Tmax.
DVio
Iio
Iib
VOH
Input Offset Voltage Drift
Input Offset Current
Vout = 2.5V
Input Bias Current
Vout = 2.5V
High Level Output Voltage
RL connected to Vcc/2
Low Level Output Voltage
VOL
RL connected to Vcc/2
Avd
GBP
CMR
SVR
Io
SR
Pm
GM
Large Signal Voltage Gain
Vout = 4Vpk-pk
Vout = 4Vpk-pk
Gain Bandwith Product
RL = 600Ω
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Vcc = 3V to 5V
Output Short-Circuit Current
Slew Rate
Phase Margin at Unit Gain
RL = 600Ω, CL =100pF
Gain Margin
RL = 600Ω, CL =100pF
TS925
TS925A
TS925
TS925A
RL= 10k
RL = 600Ω
RL = 32Ω
RL= 10k
RL = 600Ω
RL = 32Ω
RL = 10k
RL= 600Ω
RL= 32Ω
en
Equivalent Input Noise Voltage
f = 1kHz
THD
Cs
Total Harmonic Distortion
Vout = 3Vpk-pk, F = 1kHz, Av = 1, RL =600Ω
Channel Separation
TS925
Min.
4.90
4.85
60
60
50
0.7
Typ.
2
1
15
4.4
300
200
40
17
4
80
85
80
1.3
68
12
9
0.01
120
Max.
3
0.9
5
1.8
30
100
Unit
mV
µV/°C
nA
nA
V
50
120
mV
V/mV
MHz
dB
dB
mA
V/µs
Degrees
dB
---n---V-----
Hz
%
dB
5/15
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