BD648(2012) データシートの表示（PDF） - Comset Semiconductors
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BD648 Datasheet PDF : 5 Pages
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SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
-VBE
Base-Emitter Voltage
(*)
-IC=4 A, -VCE=3 V
-IC=3 A, -VCE=3 V
-VCE=3.0 V
-IC=0.5 A
-VCE=3.0 V, -IC=4 A
hFE
DC Current Gain (*)
-VCE=3.0 V, -IC=3 A
-VCE=3.0 V, -IC=8 A
-VCE=3.0 V, -IC=4 A
f=1MHz
hfe
Small Signal Current
Gain
-VCE=3.0 V
-IC=3 A, f=1MHz
ton
turn-on time
toff
turn-off time
-IC=3 A
-IBon= IBoff=12 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min Typ Max Unit
BD644
-
- 2.5
BD646
BD648
BD650
-
-
2.5
V
BD652
BD644
BD646
BD648
- 2700 -
BD650
BD652
BD644 750 -
-
BD646
BD648
BD650
750
-
-
-
BD652
BD644
BD646
BD648
- 200 -
BD650
BD652
BD644 10 -
-
BD646
BD648
BD650
10
-
BD652
All types
-
-
1
5
-
-
-
µs
18/10/2012
COMSET SEMICONDUCTORS
4|5
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