T405Q600(2002) データシートの表示（PDF） - STMicroelectronics
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T405Q600 Datasheet PDF : 7 Pages
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T405Q-600B-TR & T405Q-600H
Fig. 1: Maximum power dissipation versus RMS
on-state current.
P(W)
5
α=180°
4
3
2
180°
1
α
α
IT(RMS)(A)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig. 2: RMS on-state current versus case tem-
perature.
IT(RMS)(A)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
α=180°
Tc(°C)
50
75
100
125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-c)
1.E-02
1.E-03
1.E-03
1.E-02
1.E-01
tP(s)
1.E+00 1.E+01 1.E+02 1.E+03
Fig. 4: On-state characteristics (maximum val-
ues).
ITM(A)
100
Tj=25°C
Tj=125°C
10
VTM(V)
Tj max. :
Vto = 0.85 V
Rd = 100 mΩ
1
0
1
2
3
4
5
6
7
8
9
10
Fig. 5: Surge peak on-state current versus number
of cycles.
ITSM(A)
40
35
Non repetitive
30
Tj initial=25°C
25
20
Repetitive
15
TC=110°C
10
5
Number of cycles
0
1
10
100
t=20ms
One cycle
1000
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I2t.
ITSM(A), I²t(A²s)
1000
Tj initial=25°C
dI/dt limitation:
100
50A/µs
ITSM
10
1
0.01
tp(ms)
0.10
1.00
I²t
10.00
4/7
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