NTE5426 データシートの表示（PDF） - NTE Electronics
部品番号
コンポーネント説明
メーカー
NTE5426 Datasheet PDF : 2 Pages
| |||
NTE5426
Silicon Controlled Rectifier (SCR)
Sensitive Gate
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from off–state to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage (Gate Open, TC = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 400V
Repetitive Peak Reverse Voltage (Gate Open, TC = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 400V
RMS On–State Current (TC = +80°C, 180° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 10A
Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . . 80A
Peak Gate–Trigger Current (3µs max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT = IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0°C/W
Electrical Characteristics: (TC = +25°C and “Maximum Ratings” unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Off–State Current
IDRM, Rated VDRM or VRRM, TC = +110°C, –
IRRM RG – K = 1kΩ
– 0.1 mA
Maximum On–State Voltage
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
DC Holding Current
Turn–On Time
Critical Rate of Rise of Off–State
Voltage
VTM
IGT
VGT
IH
tgt
critical
dv/dt
IT = Rated Amps
Anode Voltage = 12V, RL = 60Ω
Anode Voltage = 12V, RL = 60Ω
Gate Open, RG – K = 1kΩ
(td + tr) IGT = 150mA
Gate Open, TC = +110°C,
RG – K = 1kΩ
–
– 2.0 V
–
– 200 µA
–
– 0.8 V
–
– 3.0 mA
–
– 2.5 µs
–
8
– V/µs
Share Link: 