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BTB24B データシートの表示(PDF) - STMicroelectronics

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BTB24B
ST-Microelectronics
STMicroelectronics 
BTB24B Datasheet PDF : 4 Pages
1 2 3 4
Fig. 3: RMS on-state current versus case temperature.
BTB24 B
Fig. 4: Relative variation of thermal impedance versus
pulse duration.
IT(rms)(A)
30
25
20
15
10
5
0
0
25
α = 180°
K=[Zth/Rth]
1.00
Zth(j-c)
0.10
Zth(j-a)
Tcase(°C)
50
75
tp(s)
0.01
100
125
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current and
holding current versus junction temperature (typical
values).
Fig. 6: Non Repetitive surge peak on-state current
versus number of cycles.
IGT,IH[Tj] / IGT,IH[Tj=25°C]
2.5
2.0
IGT
1.5
IH
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
ITSM(A)
220
200
180
160
140
120
100
80
60
40
20
0
1
Tj initial=25°C
F=50Hz
Number of cycles
10
100
1000
Fig. 7: Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t 10ms, and
corresponding value of I2t.
Fig. 8: On-state characteristics (maximum values).
ITSM(A),I²t(A²s)
1000
ITSM
500
I²t
200
100
1
tp(ms)
2
5
Tj initial=25°C
10
ITM(A)
300
100
Tj=25°C
Tj=Tj max.
10
VTM(V)
Tj max.:
Vto=0.95V
Rt=19m
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
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