BUV22(2001) データシートの表示（PDF） - ON Semiconductor
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BUV22 Datasheet PDF : 4 Pages
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ON Semiconductort
SWITCHMODEt Series
NPN Silicon Power Transistor
. . . designed for high current, high speed, high power applications.
• High DC current gain:
HFE min. = 20 at IC = 10 A
• Low VCE(sat): VCE(sat)
max. = 1.0 V at IC = 10 A
• Very fast switching times:
TF max. = 0.35 µs at IC = 20 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage (VBE = –1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage (RBE = 100 Ω)
Collector–Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(pwv10ms)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Current continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
VCEO(sus)
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
θJC
Value
250
300
7
300
290
40
50
8
250
–65 to 200
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Watts
_C
Max
Unit
0.7
_C/W
BUV22
40 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
250 VOLTS
250 WATTS
CASE 197A–05
TO–204AE
(TO–3)
1.0
0.8
0.6
0.4
0.2
0
40
80
120
160
200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 9
Publication Order Number:
BUV22/D
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