STPS2045 データシートの表示（PDF） - STMicroelectronics

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STPS2045

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS2045C

1

Characteristics

Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

45

V

IF(RMS) Forward rms current

30

A

Average forward

TO-220AB /

D²PAK

Per diode

TC = 155 °C

Per device

10

20

IF(AV) current

A

δ = 0.5, square wave TO-220FPAB TC = 140 °C Per diode

10

TC = 125 °C Per device

20

IFSM Surge non repetitive forward current

tp = 10 ms

sinusoidal

180

A

PARM(1) Repetitive peak avalanche power

VARM(2)

VASM(2)

Maximum repetitive peak avalanche voltage

Maximum single-pulse peak avalanche voltage

Tstg Storage temperature range

Tj

Maximum operating junction temperature (3)

tp = 10 µs,

Tj = 125 °C

280

W

tp < 10 µs,

Tj < 125 °C,

60

V

IAR < 7.7 A

-65 to +175

°C

175

Notes:

(1)For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes

AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky

rectifier avalanche specification”.

(2)See Figure 9.

(3)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Symbol

Rth(j-c)

Junction to case

Rth(c)

Coupling

Table 3: Thermal parameters

Parameter

TO-220AB / D²PAK

Per diode

Total

TO-220FPAB

Per diode

Total

TO-220AB / D²PAK

TO-220FPAB

Max. value

2.2

1.4

4.5

3.5

0.4

2.5

Unit

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

2/15

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