2SA1659 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SA1659 Datasheet PDF : 3 Pages
| |||
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1659
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min)
·Complement to Type 2SC4370
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.0
V
IC(DC)
Collector Current(DC)
-1.5
A
IB(DC)
PC
TJ
Base Current
Collector Power Dissipation
@TC=25℃
Junction Temperature
Tstg
Storage Temperature
-0.15
A
20
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
Share Link: 