GB50YF120N(2008) データシートの表示（PDF） - Vishay Semiconductors
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GB50YF120N Datasheet PDF : 10 Pages
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GB50YF120N
Vishay High Power Products IGBT Fourpack Module, 50 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Threshold voltage temperature coefficient
Zero gate voltage collector current
Diode forward voltage drop
Gate to emitter leakage current
BV(CES)
VCE(ON)
VGE(th)
ΔVGE(th)/ΔTJ
ICES
VFM
IGES
VGE = 0 V, IC = 500 µA
IC = 50 A, VGE = 15 V
IC = 75 A, VGE = 15 V
IC = 50 A, VGE = 15 V, TJ = 125 °C
IC = 75 A, VGE = 15 V, TJ = 125 °C
VCE = VGE, IC = 250 µA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IF = 50 A
IF = 75 A
IF = 50 A, TJ = 125 °C
IF = 75 A, TJ = 125 °C
VGE = ± 20 V
MIN.
1200
-
-
-
-
4.0
-
-
-
-
-
-
-
-
TYP.
-
3.49
4.15
4.16
4.97
4.9
- 10
11
600
3.30
3.90
3.6
4.37
-
MAX.
-
3.9
4.5
4.5
5.4
6.0
-
250
1000
4.5
5.0
4.8
5.5
± 200
UNITS
V
mV/°C
µA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
QG
QGE
QGC
IC = 50 A
VCC = 600 V
VGE = 15 V
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
IC = 50 A, VCC = 600 V
Eoff
VGE = 15 V, RG = 4.7 Ω, L = 500 µH
Etot
TJ = 25 °C (1)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode peak reverse recovery current
Diode reverse recovery time
Total reverse recovery charge
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
SCSOA
Irr
trr
Qrr
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 Ω, L = 500 µH
TJ = 125 °C (1)
IC = 50 A, VCC = 600 V
VGE = 15 V, RG = 4.7 Ω, L = 500 µH
TJ = 125 °C
TJ = 150 °C, IC = 150 A
RG = 10 Ω, VGE = 15 V to 0 V
TJ = 150 °C
VCC = 900 V, VP = 1200 V
RG = 10 Ω, VGE = 15 V to 0 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
VCC = 600 V
IF = 50 A
dI/dt = 7 A/µs
TJ = 125 °C
Note
(1) Energy losses include “tail” and diode reverse recovery
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
0.93
1.20
2.13
1.68
1.77
3.46
128
56
292
134
MAX. UNITS
-
-
nC
-
-
-
-
mJ
-
-
-
-
-
ns
-
-
Fullsquare
10
-
-
µs
-
1.3 2.3
A
-
2.0
3
-
0.453 0.49
µs
-
0.74 0.82
-
0.12 0.3
µC
-
0.4 1.5
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2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93653
Revision: 01-Sep-08
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