GB50YF120N(2008) データシートの表示（PDF） - Vishay Semiconductors

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GB50YF120N
(Rev.:2008)

IGBT Fourpack Module, 50 A

Vishay Semiconductors 

GB50YF120N

IGBT Fourpack Module, 50 A Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

MIN.

Junction to case IGBT

Junction to case DIODE

Case to sink, flat, greased surface

Mounting torque (M5)

RthJC (IGBT)

-

RthJC (DIODE)

-

RthCS (MODULE)

-

2.7

Weight

-

TYP.

-

-

0.05

-

170

MAX.

0.38

1.00

-

3.3

-

UNITS

°C/W

Nm

g

160

140

120

100

80

60

40

20

0

0

10 20 30 40 50 60 70

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

350

300

250

200

150

100

50

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000

100

10

1

0.1

0.01

1

1000

10

100

1000

VCE (V)

Fig. 3 - Forward SOA

TC = 25 °C; TJ ≤ 150 °C

10000

100

10

1

10

100

1000

10000

TC (°C)

Fig. 4 - Reverse Bias SOA

TJ = 150 °C; VGE = 15 V

Document Number: 93653

Revision: 01-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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