GB50YF120N(2008) データシートの表示（PDF） - Vishay Semiconductors
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GB50YF120N Datasheet PDF : 10 Pages
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GB50YF120N
Vishay High Power Products IGBT Fourpack Module, 50 A
1600
1400
1200
125°C
1000
800
600
400
25°C
200
0
0
20
40
60
80
100
dIF/ dt (A/µs)
Fig. 17 - Typical Diode Qrr vs. dIF/dt
VCC = 600 V; IF = 50 A
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
16
14
12
10
typical value
8
6
4
2
0
0
100 200 300 400 500
QG, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 µH
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
10
D = 0.50
0.20
1
0.10
0.1
0.01
0.001
1E-006
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
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6
For technical questions, contact: ind-modules@vishay.com
Document Number: 93653
Revision: 01-Sep-08
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