NE5550979A-T1 データシートの表示（PDF） - Renesas Electronics

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NE5550979A-T1

Silicon Power LDMOS FET

Renesas Electronics 

NE5550979A

PACKAGE DIMENSIONS

79A (UNIT: mm)

4.2 MAX.

Source

Gate

Drain

(Bottom View)

1.5±0.2

Source

Gate

Drain

0.4±0.15

5.7 MAX.

0.8 MAX.

3.6±0.2

79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)

4.0

1.7

Source

Stop up the hole with a rosin or

something to avoid solder flow.

Gate

Drain

R09DS0031EJ0300 Rev.3.00

Mar 12, 2013

0.5 0.5

6.1

Through Hole: φ0.2 × 33

Page 10 of 11

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