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TC74ACT175P データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
TC74ACT175P
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Toshiba
TC74ACT175P Datasheet PDF : 9 Pages
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9
TC74ACT175P/F/FN
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
High-level input
voltage
V
IH
Test Condition
⎯
Ta
=
25°C
Ta
= −
40 to
85°C
Unit
V
CC
(V)
Min
Typ.
Max
Min
Max
4.5 to
5.5
2.0
⎯
⎯
2.0
⎯
V
Low-level input
voltage
V
IL
⎯
4.5 to
5.5
⎯
⎯
0.8
⎯
0.8
V
High-level output
voltage
Low-level output
voltage
Input leakage
current
V
OH
V
OL
I
IN
V
IN
I
OH
= −
50
μ
A
4.5 4.4
4.5
⎯
4.4
⎯
=
V
IH
or I
OH
= −
24 mA
4.5 3.94
⎯
⎯
3.80
⎯
V
V
IL
I
OH
= −
75 mA (Note) 5.5
⎯
⎯
⎯
3.85
⎯
V
IN
I
OL
=
50
μ
A
4.5
⎯
0.0 0.1
⎯
0.1
=
V
IH
or I
OL
=
24 mA
4.5
⎯
⎯
0.36
⎯
0.44
V
V
IL
I
OL
=
75 mA (Note) 5.5
⎯
⎯
⎯
⎯
1.65
V
IN
=
V
CC
or GND
5.5
⎯
⎯ ±
0.1
⎯ ±
1.0
μ
A
Quiescent supply
current
I
CC
V
IN
=
V
CC
or GND
Per input: V
IN
=
3.4 V
I
C
Other input: V
CC
or GND
5.5
⎯
5.5
⎯
⎯
8.0
⎯
80.0
μ
A
⎯
1.35
⎯
1.5 mA
Note: This spec indicates the capability of driving 50
Ω
transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
Timing Requirements
(input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test Condition
Minimum pulse width
t
W (L)
⎯
(CK)
t
W (H)
Minimum pulse width
t
W (L)
⎯
(
CLR )
Minimum set-up time
t
s
⎯
Minimum hold time
t
h
⎯
Minimum removal time
t
rem
⎯
( CLR )
Ta
=
Ta
=
−
40 to
25°C
85°C Unit
V
CC
(V) Limit Limit
5.0
±
0.5 5.0
5.0
ns
5.0
±
0.5 5.0
5.0
ns
5.0
±
0.5 4.0
4.0
ns
5.0
±
0.5 1.0
1.0
ns
5.0
±
0.5 4.0
4.0
ns
4
2007-10-01
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