UT120N03L データシートの表示（PDF） - Unisonic Technologies

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UT120N03L

120A, 30V N-CHANNEL POWER MOSFET

Unisonic Technologies 

UT120N03

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

ID

Pulsed (Note 2)

IDM

120

A

480

A

Single Pulsed Avalanche Energy (Note 3)

EAS

240

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

6.0

V/ns

Power Dissipation (TC=25°C)

PD

125

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 0.61mH, IAS = 28A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 80A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

5. Calculated continuous current based on maximum allowable junction temperature. Package limitation

current is 100A.

„ THERMAL CHARACTERISTICS

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θJA

θJC

RATINGS

62.5

1

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-581.a

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