DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AD9364 データシートの表示(PDF) - Analog Devices

部品番号
コンポーネント説明
メーカー
AD9364
ADI
Analog Devices 
AD9364 Datasheet PDF : 32 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
Data Sheet
AD9364
TYPICAL PERFORMANCE CHARACTERISTICS
800 MHZ FREQUENCY BAND
4.0
3.5
–40°C
+25°C
+85°C
3.0
2.5
2.0
1.5
1.0
0.5
0
700
750
800
850
900
FREQUENCY (MHz)
Figure 3. Rx Noise Figure vs. Frequency
5
–40°C
+25°C
4
+85°C
3
2
1
0
–1
–2
–3
–100 –90 –80 –70 –60 –50 –40 –30 –20 –10
INPUT POWER (dBm)
Figure 4. RSSI Error vs. Input Power, LTE 10 MHz Modulation
(Referenced to −50 dBm Input Power at 800 MHz)
3
–40°C
+25°C
+85°C
2
0
–40°C
+25°C
–5
+85°C
–10
–15
–20
–25
–30
–35
–40
–45
–75 –70 –65 –60 –55 –50 –45 –40 –35 –30 –25
INPUT POWER (dBm)
Figure 6. Rx EVM vs. Input Power, 64 QAM LTE 10 MHz Mode,
19.2 MHz REF_CLK
0
–5
–40°C
–10
+25°C
+85°C
–15
–20
–25
–30
–35
–40
–45
–90 –80 –70 –60 –50 –40 –30 –20 –10
INPUT POWER (dBm)
Figure 7. Rx EVM vs. Input Power, GSM Mode, 30.72 MHz REF_CLK (Doubled
Internally for RF Synthesizer)
0
–40°C
+25°C
+85°C
–5
1
–10
0
–15
–1
–20
–2
–25
–3
–110 –100 –90 –80 –70 –60 –50 –40 –30 –20 –10
INPUT POWER (dBm)
Figure 5. RSSI Error vs. Input Power, EDGE Modulation
(Referenced to −50 dBm Input Power at 800 MHz)
–30
–72 –68 –64 –60 –56 –52 –48 –44 –40 –36 –32
INTERFERER POWER LEVEL (dBm)
Figure 8. Rx EVM vs. Interferer Power Level, LTE 10 MHz Signal of Interest with
PIN = −82 dBm, 5 MHz OFDM Blocker at 7.5 MHz Offset
Rev. C | Page 15 of 32

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]