K9K8G08U1M データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9K8G08U1M

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung 

K9K8G08U1M

K9F4G08U0M

Input Data Latch Cycle

CLE

Advance

FLASH MEMORY

tCLH

tCH

CE

ALE

WE

I/Ox

tWC

tALS

tWP

tWH

tDS tDH

DIN 0

tWP

tWP

tDS tDH

DIN 1

tDS tDH

DIN final*

NOTES : DIN final means 2,112

* Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

CE

RE

I/Ox

R/B

tRC

tREA

tREH

tREA

Dout

tRR

tRHZ

Dout

tREA

tCHZ

tCOH

tRHZ

tRHOH

Dout

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

tRLOH is valid when frequency is higher than 33MHz.

tRHOH starts to be valid when frequency is lower than 33MHz.

19

Share Link: