K9K8G08U1M データシートの表示（PDF） - Samsung

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K9K8G08U1M

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung 

K9K8G08U1M

K9F4G08U0M

Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)

Advance

FLASH MEMORY

CE

RE

I/Ox

R/B

tRC

tRP

tREH

tREA

tCEA

tRR

tREA

tRLOH

Dout

tCHZ

tCOH

tRHZ

tRHOH

Dout

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

tRLOH is valid when frequency is higher than 33MHz.

tRHOH starts to be valid when frequency is lower than 33MHz.

Status Read Cycle & EDC Status Read Cycle

CLE

CE

WE

RE

I/Ox

tCLS

tCS

tCLH

tCLR

tCH

tWP

tWHR

tCEA

tCHZ

tCOH

tDS tDH

70h or 7Bh

tIR

tREA

tRHZ

tRHOH

Status Output

20

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