TSUS520 データシートの表示（PDF） - Vishay Semiconductors

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TSUS520

GaAs Infrared Emitting Diodes in ø 5 mm (T–13/4
) Package

Vishay Semiconductors 

TSUS520.

Vishay Telefunken

Basic Characteristics

Tamb = 25_C

Parameter

Forward Voltage

Temp. Coefficient of VF

Reverse Current

Junction Capacitance

Temp. Coefficient of fe

Angle of Half Intensity

Peak Wavelength

Spectral Bandwidth

Temp. Coefficient of lp

Rise Time

Fall Time

Test Conditions

IF = 100 mA, tp = 20 ms

IF = 100mA

VR = 5 V

VR = 0 V, f = 1 MHz, E = 0

IF = 20 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

IF = 1.5 A

IF = 100 mA

IF = 1.5 A

Symbol Min

VF

TKVF

IR

Cj

TKfe

ϕ

lp

Dl

TKlp

tr

tr

tf

tf

Typ

Max Unit

1.3

1.7

V

–1.3

mV/K

100 mA

30

pF

–0.8

%/K

±15

deg

950

nm

50

nm

0.2

nm/K

800

ns

400

ns

800

ns

400

ns

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Forward Voltage

Radiant Intensity

Radiant Power

Test Conditions

Type

Symbol Min Typ Max Unit

IF=1.5A, tp=100ms TSUS5200/5201 VF

2.2 3.4

V

TSUS5202

VF

2.2 2.7

V

IF=100mA,

tp=20ms

TSUS5200

TSUS5201

Ie

10

20

Ie

15

25

mW/sr

mW/sr

IF=1.5A, tp=100ms

TSUS5202

TSUS5200

Ie

20

30

Ie

95 180

mW/sr

mW/sr

TSUS5201

Ie

120 230

mW/sr

IF=100mA,

tp=20ms

TSUS5202

TSUS5200

TSUS5201

TSUS5202

Ie

170 280

fe

13

fe

14

fe

15

mW/sr

mW

mW

mW

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2 (6)

Document Number 81055

Rev. 2, 20-May-99

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