BD226 データシートの表示（PDF） - Philips Electronics

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BD226

NPN power transistors

Philips Electronics 

Philips Semiconductors

NPN power transistors

Product specification

BD226; BD228; BD230

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

collector-base voltage

BD226

BD228

BD230

collector-emitter voltage

BD226

BD228

BD230

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

open emitter

open base

open collector

Tmb ≤ 62 °C

MIN.

MAX.

UNIT

−

45

V

−

60

V

−

100

V

−

45

V

−

60

V

−

80

V

−

5

V

−

1.5

A

−

3

A

−

1

A

−

12.5

W

−65

+150

°C

−

150

°C

−65

+150

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

Rth j-mb

thermal resistance from junction to ambient

note 1

thermal resistance from junction to mounting base

Note

1. Refer to TO-126; SOT32 standard mounting conditions.

VALUE

100

7

UNIT

K/W

K/W

1997 Mar 06

3

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