25N120 データシートの表示（PDF） - Fairchild Semiconductor
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25N120 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
Common Emitter
VGE = 15V, RG = 10
10 TC = 25C
Eon
TC = 125C
Eoff
1
0.1
10
20
30
40
50
Collector Current, IC [A]
Figure 15. SOA Characteristics
16
Common Emitter
14 RL = 24
TC = 25C
12
10
Vcc = 200V
600V
400V
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Gate Charge, Qg [nC]
Figure 16. Turn-Off SOA
100 Ic MAX (Pulsed)
Ic MAX (Continuous)
100
50s
100s
10
1ms
DC Operation
1
10
Single Nonrepetitive
0.1 Pulse TC = 25C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, VCE [V]
1000
Safe Operating Area
1
VGE = 15V, TC = 125C
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
1
0.5
10 .
0.2
0.1
0.05
0.0 1
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.0 1
0.1
R e c t a n g u l a r P u ls e D u r a ti o n [ s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + TC
1
10
©2006 Fairchild Semiconductor Corporation
6
FGA25N120ANTD/FGA25N120ANTD_F109 Rev. C0
www.fairchildsemi.com
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