B1002 データシートの表示（PDF） - Renesas Electronics

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B1002

Silicon PNP Epitaxial

Renesas Electronics 

2SB1002

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

–70

—

—

V IC = –10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO –50

—

—

V IC = –1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

–6

—

—

V IE = –10 µA, IC = 0

Collector cutoff current

ICBO

—

—

–0.1

µA VCB = –50 V, IE = 0

Emitter cutoff current

IEBO

—

—

–0.1

µA VEB = –4 V, IC = 0

DC current transfer ratio

hFE

160

—

320

VCE = –2 V, IC = –0.1 A

Collector to emitter saturation voltage

VCE(sat)

—

—

–0.6

V IC = –1 A,

IB = –0.1 A (Pulse test)

Base to emitter saturation voltage

VBE(sat)

—

—

–1.2

V IC = –1 A,

IB = –0.1 A (Pulse test)

Gain bandwidth product

fT

—

150

—

MHz VCE = –2 V,

IC = –10 mA (Pulse test)

Collector output capacitance

Cob

—

35

—

pF VCB = –10 V, IE = 0,

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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