2SA1350 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SA1350

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1350

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–40

V

–30

V

–5

V

–100

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –40 —

voltage

Collector to emitter breakdown V(BR)CEO –30 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

200

Collector output capacitance Cob

—

—

Noise figure

NF

—

1.0

Note: 1. The 2SA1350 is grouped by hFE as follows.

B

C

D

100 to 200 160 to 320 250 to 500

Max Unit Test conditions

—

V

IC = –10 µA, IE = 0

—

V

IC = –1 mA, RBE = ∞

—

V

IE = –10 µA, IC = 0

–0.5 µA

–0.5 µA

500

–0.75 V

–0.2 V

VCB = –18 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

—

MHz VCE = –12 V, IC = –2 mA

4.5 pF

VCB = –10 V, IE = 0, f = 1 MHz

5.0 dB

VCE = –6 V, IC = –0.1 mA

Rg = 1 kΩ, f = 1 kHz

See characteristic curves of 2SA1031.

2

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