2SC1815(2011) データシートの表示（PDF） - Unisonic Technologies
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2SC1815 Datasheet PDF : 4 Pages
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2SC1815
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
50
mA
Power Dissipation(Ta=25℃)
PD
400
mW
Junction Temperature
TJ
+125
℃
Storage Temperature
TSTG
-55 ~ +125
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
TEST CONDITIONS
ICBO VCB=60V, IE=0
IEBO VEB=5V, IC=0
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=100mA, IB=10mA
hFE1 VCE=6V, IC=2mA
hFE2 VCE=6V, IC=150mA
fT VCE=10V, IC=50mA
Cob VCB=10V, IE=0, f=1MHz
NF
IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
GR
200-400
MIN TYP MAX UNIT
100 nA
100 nA
0.1 0.25
V
1.0
V
120
700
25
80
MHz
2.0
3.0
pF
1.0
10
dB
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-006,F
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