4800B データシートの表示（PDF） - Philips Electronics
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4800B Datasheet PDF : 12 Pages
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Philips Semiconductors
SI4800
N-channel TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
SI4800
SO8
plastic small outline package; 8 leads
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDS
drain-source voltage (DC)
VGS
gate-source voltage (DC)
ID
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
-
-
Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3 -
Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2
-
Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 1
-
Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 1
-
−55
−55
IS
source (diode forward) current
Tamb = 25 °C; pulsed; tp ≤ 10 s
-
Version
SOT96-1
Max Unit
30
V
±20
V
9
A
7
A
40
A
2.5
W
1.6
W
+150 °C
+150 °C
2.3
A
9397 750 12899
Product data
Rev. 02 — 17 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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