2SK1482 データシートの表示（PDF） - Renesas Electronics

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2SK1482

N-CHANNEL / MOS FIELD EFFECT TRANSISTOR

Renesas Electronics 

2SK1482

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

5 Drain to Source On-state Resistance

| yfs |

RDS(on)1

VDS = 10 V, ID = 0.5 A

VGS = 4.0 V, ID = 0.5 A

RDS(on)2

VGS = 10 V, ID = 0.5 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 25 V, ID = 0.5 A

Rise Time

tr

VGS = 10 V

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

tf

SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

0 10%

VGS

90%

ID

90%

ID

ID

0 10%

Wave Form

90%

10%

td(on) tr td(off) tf

ton

toff

MIN.

1.3

0.4

TYP.

1.8

0.19

0.15

230

170

45

15

50

420

240

MAX.

10

±10

2.5

0.8

0.4

UNIT

µA

µA

V

S

Ω

Ω

pF

pF

pF

ns

ns

ns

ns

2

Data Sheet D15670EJ2V0DS

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