NXP Semiconductors
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
006aac000
1
0
0.02
0.01
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
aaa-013299
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, 4-layer copper, standard footprint
10
102
103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5330PAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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