10N40L-TF1-T データシートの表示（PDF） - Unisonic Technologies

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10N40L-TF1-T

10.5A, 400V N-CHANNEL POWER MOSFET

Unisonic Technologies 

10N40

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Continuous (TC=25°C)

Pulsed (Note 2)

Avalanche Current (Note 2)

Avalanche Energy Single Pulsed (Note 3)

Repetitive (Note 4)

Peak Diode Recovery dv/dt (Note 4)

SYMBOL

VDSS

VGSS

ID

IDM

IAR

EAS

EAR

dv/dt

RATINGS

400

±30

10.5

42

11

360

13.5

4.5

UNIT

V

V

A

A

A

mJ

mJ

V/ns

TO-220

Power Dissipation

TO-220F1

TO-220

PD

Derate above 25°C

TO-220F1

135

W

44

W

1.07

W/°C

0.35

W/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 5.7mH, IAS = 10.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-220F1

SYMBOL

θJA

θJC

RATINGS

62.5

0.93

2.86

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-549.b

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