1S20D1 データシートの表示（PDF） - Yangzhou yangjie electronic co., Ltd
部品番号
コンポーネント説明
メーカー
1S20D1 Datasheet PDF : 4 Pages
| |||
1S20 THRU 1S200
RoHS
COMPLIANT
Schottky Barrier Rectifier
Features
● Guardring for overvoltage protection
● Very small conduction losses
● Extremely fast switching
● High forward surge capability
● High frequency operation
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Mechanical Data
● Package: R-1
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, Halogen free
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: Color band denotes the cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT 1S20 1S30
1S40
1S50
1S60
1S80 1S100 1S150 1S200
Device marking code
1S20 1S30 1S40 1S50 1S60 1S80 1S100 1S150 1S200
Repetitive Peak Reverse Voltage
Average Rectified Output Current
@60Hz sine wave, Resistance load, Ta (FIG.1)
Surge(Non-repetitive)Forward Current
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
VRRM
V
20
30
40
50
60
80
100 150 200
IO
A
IFSM
A
Tstg
℃
1.0
30
-55 ~+150
Junction Temperature
Tj
℃
-55 ~+125
-55 ~+150
■Electrical Characteristics（Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT TEST CONDITIONS 1S20 1S30 1S40
Maximum instantaneous forward
voltage drop per diode
VF
Maximum DC reverse current at
rated DC blocking voltage per
IR
diode
Typical junction capacitance
Cj
V IFM=1.0A
mA
Ta=25℃
Ta=100℃
Measured at 1MHZ
pF and Applied Reverse
Voltage of 4.0 V.D.C.
0.55
0.2
20
1S50 1S60
0.7
110
1S80 1S100 1S150 1S200
0.85
0.1
5
S-A249
Rev. 2.0, 31-Oct-14
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Share Link: 