2N6263 データシートの表示（PDF） - Inchange Semiconductor
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2N6263 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6263 2N6264
DESCRIPTION
·With TO-66 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·A wide variety of medium-to-high power,
high-voltage applications
·Series and shunt regulators
·High-fidelity amplifiers
·Power switching circuits
·Solenoid drivers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6263
2N6264
VCEO
Collector-emitter voltage
2N6263
2N6264
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
2N6263
PT
Total power dissipation
2N6264
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
140
170
120
150
7
3
4
2
20
50
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
2N6263
2N6264
MAX
8.75
3.5
UNIT
℃/W
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