2N6520TA データシートの表示（PDF） - Fairchild Semiconductor
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2N6520TA Datasheet PDF : 6 Pages
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Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BVCBO Collector-Base Breakdown Voltage
IC= -100μA, IE=0
BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
IE= -10μA, IC=0
ICBO Collector Cut-off Current
VCB= -250V, IE=0
IEBO Emitter Cut-off Current
VEB= -4V, IC=0
hFE * DC Current Gain
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
VCE (sat) Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
VBE (sat) Base-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
VBE (on) Base-Emitter On Voltage
VCE= -10V, IC= -100mA
fT
* Current Gain Bandwidth Product
VCE= -20V, IC= -10mA, f=20MHz
Cob Output Capacitance
VCB= -20V, IE=0, f=1MHz
CEB Emitter-Base Capacitance
VEB= -0.5V, IC=0, f=1MHz
tON Turn On Time
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
tOFF Turn Off Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
VCC= -100V, IC= -50mA
IB1=IB2= -10mA
Min.
-350
-350
-5
20
30
30
20
15
40
Max.
-50
-50
200
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
-2
200
6
100
200
Units
V
V
V
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
3.5
ns
© 2009 Fairchild Semiconductor Corporation
2N6520 Rev. B1
2
www.fairchildsemi.com
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