JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=6mA
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA
VBE-1
Base -emitter on voltage
IC=3A ; VCE=3V
VBE-2
Base -emitter on voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IC=8A ; VCE=3V
VCE=120V; VBE=-1.5V
TC=125℃
VCE=120V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=3V
hFE-2
DC current gain
IC=8A ; VCE=3V
VF
Diode forward voltage
IF=5A
Product Specification
2N6537
MIN TYP. MAX UNIT
120
V
2.0
V
3.0
V
2.8
V
4.5
V
0.5
5.0
mA
1.0
mA
5.0
mA
1000
10000
100
5000
4.0
V
2