NXP Semiconductors
2PB710ARL; 2PB710ASL
50 V, 500 mA PNP general-purpose transistors
Table 8. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VBEsat
fT
base-emitter saturation
voltage
transition frequency
IC = −300 mA;
IB = −30 mA
VCE = −10 V;
IC = −50 mA;
f = 100 MHz
hFE group R
hFE group S
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
8. Test information
Min Typ Max Unit
[1] -
-
−1.5 V
120 -
140 -
-
-
-
MHz
-
MHz
15 pF
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
1.9
Dimensions in mm
Fig 1. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
2PB710AXL_1
Product data sheet
Rev. 01 — 29 October 2008
© NXP B.V. 2008. All rights reserved.
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