2SA1262 データシートの表示（PDF） - Inchange Semiconductor
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2SA1262 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-60V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-4V
fT
Transition frequency
IE=0.2A ; VCE=-12V
Cob
Output capacitance
IE=0 ; VCB=-10V ;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-2A ;IB1=- IB2=-0.2A
RL=10Ω;VCC=-20V
Product Specification
2SA1262
MIN TYP. MAX UNIT
-60
V
-0.6 V
-100 μA
-100 μA
40
15
MHz
90
pF
0.25
μs
0.75
μs
0.25
μs
2
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