2SA1932 データシートの表示（PDF） - Toshiba

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2SA1932

Transistor Silicon PNP Epitaxial Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE

VCE (sat)

VBE

fT

Cob

VCB = −230 V, IE = 0

VEB = −5 V, IC = 0

IC = −10 mA, IB = 0

VCE = −5 V, IC = −100 mA

IC = −500 mA, IB = −50 mA

VCE = −5 V, IC = −500 mA

VCE = −10 V, IC = −100 mA

VCB = −10 V, IE = 0, f = 1 MHz

Marking

2SA1932

Min

―

―

−230

100

―

―

―

―

Typ.

―

―

―

―

―

―

70

30

Max

−1.0

−1.0

―

320

−1.5

−1.0

―

―

Unit

μA

μA

V

V

V

MHz

pF

A1932

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-09

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