2SA2049 データシートの表示（PDF） - ROHM Semiconductor

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2SA2049

Medium power transistor (−30V, −2.0A)

ROHM Semiconductor 

Transistor

2SA2049

Medium power transistor (−30V, −2.0A)

2SA2049

!Features

1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A)

2) Low saturation voltage, typically

(Typ. : −250mV at IC = −1.0A, IB = −100mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SC5731

!Applications

Small signal low frequency amplifier

High speed switching

!External dimensions (Units : mm)

MPT3

4.0

1.0

2.5

0.5

(1)

(2)

(3)

(1)Base

(2)Collector

(3)Emitter

Each lead has same dimensions

Abbreviated symbol : UX

!Structure

PNP Silicon epitaxial planar transistor

!Packaging specifications

Type

Package

Code

Basic ordering unit (pieces)

2SA2049

Taping

T100

1000

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

VCBO

VCEO

VEBO

IC

ICP

Power dissipation

PC

Junction temperature

Tj

Range of storage temperature Tstg

∗1 Pw=100ms

*2 Mounted on a 40×40×0.7 (mm) ceramic substrate

Limits

−30

−30

−6

−2.0

−4.0

500

2.0

150

−55~+150

Unit

V

V

V

A

A ∗1

mW

W ∗2

°C

°C

1/3

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