2SA2049 データシートの表示（PDF） - ROHM Semiconductor
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2SA2049 Datasheet PDF : 4 Pages
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Transistor
2SA2049
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −30 − − V IC= −100µA
Collector-emitter breakdown voltage BVCEO −30 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −6 −
−
V IE= −100µA
Collector cut-off current
ICBO
−
− −1.0 µA VCB= −20V
Emitter cut-off current
IEBO
−
− −1.0 µA VEB= −4V
Collector-emitter saturation voltage VCE (sat) − −250 −500 mV IC= −1.0A, IB= −100mA
DC current gain
hFE 120 − 390 − VCE= −2V, IC= −100mA
Transition frequency
fT
− 350 − MHz VCE= −10V, IE=100mA, f=10MHz
Collector output capacitance
Turn-on time
Storage time
Fall time
Cob
Ton
Tstg
Tf
− 25 −
− 25 −
− 100 −
− 20 −
pF VCB= −10V, IE=0A, f=1MHz
ns IC= −2.0A
ns
IB1= −200mA
IB2=200mA
ns VCC −25V
!hFE RANK
Q
120−270
R
180−390
!Electrical characteristic curves
−10
1ms
10ms
−1
100ms
DC
−0.1
−0.01
Single
non repetitive
−0.00−10.0P1ulse −0.1
−1
−10
−100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
100
Ta=25°C
VCC= −25V
IC/IB=10/1
Tstg
Tf
Ton
10
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
1000
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE= −2V
1
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
1000
100
10
Ta=25°C
VCE= −5V
VCE= −3V
VCE= −2V
1
−0.001 −0.01 −0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
−10
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
IC/IB=10/1
−0.−001.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
−10
Ta=25°C
−1
−0.1
IC/IB=20/1
IC/IB=10/1
−0.−001.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
2/3
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