2SA2065(2001) データシートの表示（PDF） - Toshiba

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2SA2065
(Rev.:2001)

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

2SA2065

rth – tw

1000

100

10

1

0.001

0.01

Curves should be applied in thermal limited area.

Single nonrepetitive pulse Ta = 25°C

Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm2)

0.1

1

10

100

1000

Pulse width tw (s)

Safe Operating Area

-10

IC max (pulsed) ¨ 10 ms¨ 1 ms¨ 100 ms¨

IC max (continuous) 100 ms¨*

-1

10 s¨*

DC operation *

(Ta = 25°C)

¨: Single nonrepetitive pulse

-0.1

Ta = 25°C

Note that the

curves for 100 ms*,

10 s* and DC operation* will be

different when the devices aren’t

mounted on an FR4 board (glass

epoxy, 1.6 mm thick, Cu area:

645 mm2). These characteristic

curves must be derated linearly

with increase in temperature.

-0.01

-0.1

-1

-10

Collector-emitter voltage VCE (V)

-100

4

2001-10-29

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