2SA650 データシートの表示（PDF） - SavantIC Semiconductor

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2SA650

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA650

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat

Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-5V

COB

Collector output capacitance

fT

Transition frequency

IE=0; VCB=-10V;f=1MHz

IC=-1A ; VCE=-5V

MIN TYP. MAX UNIT

-150

V

-150

V

-6

V

-2.0

V

-2.5

V

-0.1 mA

-0.1 mA

30

150

500

pF

10

MHz

2

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