2SB1172A データシートの表示（PDF） - Panasonic Corporation
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2SB1172A Datasheet PDF : 3 Pages
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Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB1172 VCBO
−60
V
(Emitter open)
2SB1172A
−80
Collector-emitter voltage 2SB1172 VCEO
−60
V
(Base open)
2SB1172A
−80
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−3
A
Peak collector current
ICP
−5
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1172 VCEO IC = −30 mA, IB = 0
−60
V
(Base open)
2SB1172A
−80
Base-emitter voltage
VBE VCE = −4 V, IC = −3 A
Collector-emitter cutoff 2SB1172 ICES VCE = −60 V, VBE = 0
current (E-B short)
2SB1172A
VCE = −80 V, VBE = 0
Collector-emitter cutoff 2SB1172 ICEO VCE = −30 V, IB = 0
current (Emitter open)
2SB1172A
VCE = −60 V, IB = 0
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
Forward current transfer ratio
hFE1 * VCE = −4 V, IC = −1 A
70
hFE2 VCE = −4 V, IC = −3 A
10
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = − 0.375 A
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
Turn-on time
Storage time
ton
IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A
tstg
VCC = −50 V
Fall time
tf
−1.8
V
−200 µA
−200
−300 µA
−300
−1
mA
250
−1.2
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
70 to 150 120 to 250
Publication date: February 2003
SJD00048AED
1
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