2SB1172, 2SB1172A
PC Ta
20
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
15
10
(1)
5
(2)
0
0
40
80
120
160
Ambient temperature Ta (°C)
IC VCE
−6
TC=25˚C
−5
IB=–100mA
−4
–80mA
–60mA
−3
–40mA
–30mA
−2
–20mA
–12mA
−1
–8mA
–4mA
–16mA
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
IC VBE
−10
VCE=–4V
−8
−6
25˚C
TC=100˚C
–25˚C
−4
−2
0
0 − 0.4 − 0.8 −1.2 −1.6 −2.0
Base-emitter voltage VBE (V)
−100
−10
VCE(sat) IC
IC/IB=10
−1
− 0.1
TC=100˚C
–25˚C
25˚C
− 0.01
− 0.01
− 0.1
−1
−10
Collector current IC (A)
hFE IC
104
VCE=–4V
103
TC=100˚C
102
–25˚C
25˚C
10
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
fT IC
104
VCE=–5V
f=10MHz
TC=25˚C
103
102
10
1
− 0.01
− 0.1
−1
−10
Collector current IC (A)
Safe operation area
−100
Non repetitive pulse
103
TC=25˚C
−10
102
ICP
IC
t=1ms
−1
t=10ms
10
t=300ms
− 0.1
1
Rth t
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
(2)
− 0.01
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
10−1
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
2
SJD00048AED