2SB1132L-Q-AB3-R データシートの表示（PDF） - Unisonic Technologies
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2SB1132L-Q-AB3-R Datasheet PDF : 5 Pages
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2SB1132
TYPICAL CHARACTERISTICS
-500
-200
-100
-50
Grounded Emitter Propagation
Characteristics
VCE =-6V
TA=100
TA=25
-20 TA= -55
-10
-5
-2
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Base to Emitter Voltage, VBE(V)
DC Current Gain vs. Collector Current ( )
1000
TA=25
500
VCE= -3V
200
VCE= -1V
100
50
-1 -2
-5 -10 -20 -50-100 -200 -500-1000
Collector Current, Ic(mA)
Collector-emitter Saturation Voltage vs.
-1
TA=25
Collector Current
-0.5 IC/IB=10
-0.2
-0.1
-0.05
-0.02
-0.01
-1 -2
-5 -10 -20 -50-100-200-500-1000-2000
Collector Current, Ic(mA)
PNP SILICON TRANSISTOR
-500
-3.0
-3.5
-400
Grounded Emitter Output
Characteristics
-4.0 -2.5
-2.0
-4.5
-300
-5.0
-1.5
-1.0
-200
-0.5
-100
0
TA=25 IB =0mA
0
-0.4 -0.8 -1.2 -1.6 -2.0
Collector to Emitter Voltage, VCE(V)
DC Current Gain vs.Collector Current ( )
1000
VCE= -3V
500
TA=100
200
TA=25
100
50
-1 -2
TA= -55
-5 -10 -20 -50-100 -200 -500-1000
Collector Current :Ic(mA)
Collector Emitter Saturation Voltage vs.
Base Current
-1.0
TA=25
-0.8
-0.6
-0.4
IC = -500mA
-0.2
0
-1
IC = -300mA
-2 -5 -10 -20 -50 -100
Base Current, IB(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R208-016.C
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